
UV Photodiodes SIC
UV-photodiodes based on SiC (Silicon Carbide) are intrinsic visible blind due to high bandgap material, extreme irradiation hardness, versions with integrated UVA, UCB or UVC filters on request

UV Photodiodes SIC - large area arrays
UV photodiode array based on 4 parallel SiC detector chips for ultra low level UV radiation sensitivity, active area: 3.84 mm², peak response at 280 nm

UV Photodiodes SIC with TIA
UV photodiode based on SiC with integrated transimpedance amplifier for ultra low level UV radiation detection
Wavelength of peak response: 280 nm

UV Photodiodes GaP
UV photodiodes based on GaP

UV Photodiodes GaN
UV-photodiodes based on GaN are intrinsic visible blind due to high bandgap material, extreme irradiation hardness

UV Photodiode GaN with TIA
UV-photodiode based on GaN with integrated transimpedance amplifier for ultra low level UV radiation detection
Wavelength of peak response: 280 nm, 320 nm, 370 nm, 395 nm
| Spectral range | Package | Note | Data sheet | |
| GUVC-T21GH | 220 - 280 nm | TO-5 | integrated TI amplifier, quartz window | request |
| GUVB-T21GH | 220 - 320 nm | TO-5 | integrated TI amplifier, quartz window | request |
| GUVA-T21GH | 220 - 370 nm | TO-5 | integrated TI amplifier, quartz window | request |
| GUVV-T20GH | 220 - 395 nm | TO-5 | integrated TI amplifier, quartz window | request |

UV Sensor Modules GaN
UV Sensor Modules based on GaN
-> PHASE OUT
UV Photodiodes AlGaN
UV photodiodes based on AlGaN
| Spectral range | Chip size | Package | Note | Data sheet | |
| GaN-UVA-SMD | 220 - 370 nm | 0.076 mm² | SMD 3228 | peak at 350 nm | ![]() |
| AlGaN-UVB | 225 - 317 nm | 0.076 mm² | TO-18 | peak at 300 nm | ![]() |

UV Photodiodes TiO2
UV photodiodes based on thin film TiO2 sensor technology
MOQ: 1 piece
